Charged particle beam lithography system and method therefor

Details Charged particle beam lithography system and method therefor Charged particle beam lithography system and method therefor

1992-03-27

1994-05-10

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37304

Patent

active

053110269

ABSTRACT:
The present invention relates to a system for drawing patterns on a wafer by using a charged particle beam such as an electron beam, in which a complicated prealigning mechanism used for mounting the wafer on a stage is omitted. Instead, according to the present system, rotation of the wafer is detected and a shaped beam is rotated by an amount corresponding to the value detected. Subsequently, a predetermined pattern is drawn on the substrate. The system includes a detecting device for detecting the rotation of the wafer by using an orientation flat or adjusting marks; a computer for storing a value corresponding to the rotation thus detected; a rotating lens control circuit for receiving data from the computer; and a rotating lens.

REFERENCES:
J. Vac. Sci. Technol. B3(1), Jan./Feb. 1985 pp. 98-101.

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