Charged particle beam lithography system

Details Charged particle beam lithography system Charged particle beam lithography system

1986-10-24

1989-05-09

Ruggiero, Joseph

Boots, shoes, and leggings

2504923, 364490, G06F 1520, H01J 314

Patent

active

048294446

ABSTRACT:
A charged particle beam lithography system has a high-throughput and inexpensive system configuration. The system configuration is constituted by a plurality of charged particle optical systems each adapted to focus and deflect a beam of charged particles and irradiate the beam onto a specimen so that the beam draws a desired pattern on the specimen, a plurality of deflection distortion correcting circuits each associated with each of the charged particle optical systems for correcting a deflection distortion of each charged particle optical system, and a common pattern data control circuit for supplying data of a pattern to be drawn to each of the plurality of deflection distortion correcting circuits.

REFERENCES:
patent: 4390788 (1983-06-01), Hayashi et al.
patent: 4390789 (1983-06-01), Smith
patent: 4430571 (1984-02-01), Smith
patent: 4433384 (1984-02-01), Berrian et al.
patent: 4538232 (1985-08-01), Koyama
patent: 4694178 (1987-09-01), Harte
Nakamura et al. "A High Speed, High Precision Electron Beam Lithography System" (System Design)-J. Vac. Sci. Tech., 3(1), Jan./Feb., 1985, pp. 94-97, 106-111.
Cleaver, et al.-"A Combined Electron and Ion beam Lithography System", Journal of Vacuum Science & Technology, vol. 3, No. 1, pp. 144-147, Jan./Feb. 1985.
Roelofs, et al. "Feasibility of Multi-Beam Electron Lithography" Microelectronic Engineering, vol. 2, No. 4, pp. 259-279, Dec. 84.

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