Charged-particle beam lithography method

Details Charged-particle beam lithography method Charged-particle beam lithography method

1991-12-13

1992-08-25

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430 5, 430296, 430942, G03C 500

Patent

active

051418304

ABSTRACT:
Method of writing patterns on a substrate, for fabricating masks used in semiconductor fabrication. Thin films are deposited on the substrate. A resist, typically a negative resist, sensitive to an electron beam is applied to the films. The desired patterns are written on the resist with the electron beam. Undesired portions of the films are etched away. The selective removal of the films deforms the substrate. The amount of the deformation is forecasted. The positions at which the electron beam hits the resist are corrected according to the forecasted amount.

REFERENCES:
patent: 4500789 (1985-02-01), Ban et al.
patent: 4576884 (1986-03-01), Reisman
patent: 4652762 (1987-03-01), Ward

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