Charged particle beam lithography machine incorporating localize

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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Details

2504411, 219121EN, 219121EQ, H01J 3718, H01J 3302

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active

046071679

ABSTRACT:
A charged particle beam lithography machine includes a beam source and beam steering and forming elements within an evacuated column. A stage assembly for supporting a semiconductor wafer or mask is positioned in ambient and proximate the exit end of said beam steering and forming elements. A vacuum envelope apparatus is affixed to the exit end of the beam steering and forming elements so that the outer surface or tip of the vacuum envelope apparatus rests in spaced apart, close coupled opposition to the wafer or mask supported on the stage. The vacuum envelope apparatus includes internal structural members which define an internal vacuum processing zone and at least one surrounding intermediate vacuum zone. A graded vacuum seal is formed between the tip of the vacuum envelope and the mask or wafer. The seal extends from the internal vacuum processing zone to the external ambient. Lithographic operations are conducted on the mask or wafer as relative motion between the stage assembly and the beam steering and forming elements is accomplished.

REFERENCES:
patent: 3156811 (1964-11-01), Barry
patent: 3388235 (1968-06-01), Pinsley et al.
patent: 3426173 (1969-02-01), Steigerwald
patent: 3504371 (1970-03-01), Reeds, Jr.
patent: 4063103 (1977-12-01), Sumi
patent: 4393295 (1983-07-01), Beisswenger et al.

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