Charged particle beam lithography apparatus and method

Details Charged particle beam lithography apparatus and method Charged particle beam lithography apparatus and method

2006-01-24

2008-10-07

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S491100, C250S492220

Reexamination Certificate

active

07432515

ABSTRACT:
A charged particle beam lithography apparatus includes a charged particle beam generation source; a charged particle beam forming portion through which the charged particle beam is transmitted; a first deflector arranged between the charged particle beam forming portion and the charged particle beam generation source; a second deflector arranged between the first deflector and the charged particle beam forming portion; an imaging unit obtaining image data of the aperture; and a control portion calculating amounts of excitation of the first and second deflector based on the image data. The charged particle beam is deflected by the first deflector to intersect the optical axis. The deflected charged particle beam is deflected by the second deflector to advance on the optical axis. The control portion controls the first and second deflectors based on the calculated amounts of excitation.

REFERENCES:
patent: 4321510 (1982-03-01), Takigawa
patent: 4524277 (1985-06-01), Shimura et al.
patent: 4939371 (1990-07-01), Goto
patent: 09-063937 (1997-03-01), None

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