Charged-particle-beam lithography

Details Charged-particle-beam lithography Charged-particle-beam lithography

1987-05-12

1988-05-03

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3726

Patent

active

047422343

ABSTRACT:
An elongated source of charged particles is utilized in a lithographic system to form multiple focused electron (or ion) beams arranged in a linear array. The basis for an extremely high-throughput lithographic system especially suited for direct writing applications is thereby provided.

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IEEE Transactions on Electron Devices, vol. ED-28, No. 11, Nov. 1981, "A Multiple-Electron-Beam Exposure System for High-Throughput, Direct-Write Submicrometer Lithography", by I. Brodie et al., pp. 1422-1428.

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