Charged particle beam lithography

Details Charged particle beam lithography Charged particle beam lithography

1979-12-17

1981-08-04

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, A61K 2702, G01K 108

Patent

active

042824370

ABSTRACT:
In a high-throughput electron beam exposure system, an electron spot is rapidly scanned across a mask plate that includes an aperture whose opening dimension parallel to one axis varies as a function of position along another axis. The extent of each scan across the aperture purposely exceeds the opening dimension of the aperture at any specified scanning position. In this way, the relatively inaccurate end or on-off portions of each scan line are in effect mechanically blanked by the apertured plate. High-speed uniform scanning of an electron spot along a precisely defined line segment on a surface to be irradiated is thereby realized. Such a system is characterized by high-speed exposure of the surface with excellent edge definition of specified features.

REFERENCES:
patent: 4112305 (1978-09-01), Goto et al.
patent: 4167676 (1979-09-01), Collier
patent: 4182958 (1980-01-01), Goto et al.

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