Charged-particle beam lithographic system

Details Charged-particle beam lithographic system Charged-particle beam lithographic system

2006-05-23

2006-05-23

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000, C250S492200, C250S398000, C250S491100, C219S121250, C315S382000

Reexamination Certificate

active

07049611

ABSTRACT:
When the focal point of the objective lens of a charged-particle beam lithographic system is shifted according to the deflection position within a writing field, the image magnification of the objective lens will vary. In the present invention, the focal point of the objective lens is shifted in a corresponding manner to deflection positions in X- and Y-directions, respectively. Amounts of variations in the image magnification are previously measured, as well as the amounts of shifts. The results are stored in a memory. During lithographic writing, the focus of the objective lens is varied by referring to the memory according to the deflection positions. The size and position of a pattern to be written are corrected by controlling a shaping deflector and a positioning deflector.

REFERENCES:
patent: 5173582 (1992-12-01), Sakamoto et al.
patent: 6207965 (2001-03-01), Koike
patent: 6897454 (2005-05-01), Sasaki et al.
patent: 58005954 (1983-01-01), None
patent: 8264420 (1996-10-01), None

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