Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-05-07
2000-12-05
Arroyo, Teresa M.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25049222, 2504923, 2504941, H01J 37153, H01J 37147
Patent
active
061570397
ABSTRACT:
A charged particle beam column efficiently illuminates a blanking aperture array by splitting a charged particle beam into multiple charged particle beams and focusing each charge particle beam on a separate aperture of the blanking aperture array. Where an electron source with a small effective source size is used, for example an electron field emission source or Schottky source, crossovers of the individual beams may occur within the separate apertures of the blanking aperture array. Consequently, no demagnification of the beams passing through the blanking aperture array is necessary to form a small exposure pixel on the writing plane. Thus, for example, electron-electron interactions are minimized, thereby increasing throughput of the system. Further, undesirable scattering of the charged particle off the edge or sidewall of the apertures of the blanking aperture array is avoided. Moreover, regardless of the type of source used, by focusing each individual charged particle beam on the separate apertures of the blanking aperture array, the charged particle beam column minimizes undesirable heating, thermal drift or charging of the blanking aperture array.
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H. Yasuda et al., "Multielectron Beam Blanking Aperture Array System SYNAPSE-200*",J. Vac. Sci. Technol. B 14(6) Nov./Dec. 1996, American Vacuum Society, pp. 3813-3820.
Arroyo Teresa M.
Etec Systems, Inc.
Wells Nikita
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