Charged particle beam exposure method of character...

Details Charged particle beam exposure method of character... Charged particle beam exposure method of character...

2006-10-19

2008-12-02

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492230, C250S492200, C250S492300, C250S397000

Reexamination Certificate

active

07459705

ABSTRACT:
A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

REFERENCES:
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patent: 6703629 (2004-03-01), Nakasugi
patent: 6803589 (2004-10-01), Nakasugi
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patent: 2005/0214958 (2005-09-01), Nakasuji et al.
patent: 2004-281508 (2004-10-01), None
Inanami, R. et al., “Electron Beam Writing Method, Electron Beam Writing Apparatus and Semiconductor Device Manufacturing Method,” U.S. Appl. No. 11/409,987, filed Apr. 25, 2006.

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