Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-05-23
2006-05-23
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492220, C250S398000
Reexamination Certificate
active
07049610
ABSTRACT:
In a charged particle beam exposure method of applying
ot applying charged particle beams to expose a substrate by deflecting the charged particle beams to move the charged particle beams on a blanking aperture stop, the size of the charged particle beams on the blanking aperture stop is made larger than the size of the blanking aperture stop.
REFERENCES:
patent: 5834783 (1998-11-01), Muraki et al.
patent: 5949078 (1999-09-01), Ooaeh et al.
patent: 5973332 (1999-10-01), Muraki et al.
patent: 6166387 (2000-12-01), Muraki et al.
patent: 6274877 (2001-08-01), Muraki
patent: 6323499 (2001-11-01), Muraki et al.
patent: 6483120 (2002-11-01), Yui et al.
patent: 6515409 (2003-02-01), Muraki et al.
patent: 2002/0008207 (2002-01-01), Muraki et al.
patent: 2003/0122087 (2003-07-01), Muraki et al.
patent: 9-245708 (1997-09-01), None
Muraki Masato
Yoda Haruo
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hitachi High-Technologies Corporation
Nguyen Kiet T.
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