Charged particle beam exposure method and method for making patt

Details Charged particle beam exposure method and method for making patt Charged particle beam exposure method and method for making patt

1998-03-12

2000-04-11

Berman, Jack

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049223, H01J 37302

Patent

active

060490853

ABSTRACT:
In a charged-particle beam exposure method, an aperture mask for partial overall exposure is used to perform exposure of a pattern so that there is no overlapping, thereby forming a number of transfer patterns. When doing this, exposure is done with an amount of exposure that is 1/2 the amount capable of forming a pattern. Then, the shot position is changes so that the exposure position overlaps with the previous exposure position and exposure is done to form the next transfer pattern. When doing this, the amount of exposure is also 1/2 the amount required to form a pattern. In this manner, exposure is performed two times each, with the amount of exposure being 1/2 each time, as the exposure position is shifted.

REFERENCES:
patent: 4099062 (1978-07-01), Kitcher
patent: 4298803 (1981-11-01), Matsuura et al.

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