Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-05
2006-09-05
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492220, C250S492200
Reexamination Certificate
active
07102147
ABSTRACT:
Provided is a charged particle beam exposure method placing an mask having openings in an exposure apparatus that including a deflector which deflects a charged particle beam on the mask, applying a first voltage to the deflector, the first voltage deflects the beam at an first opening, sequentially exposing all the character patterns which can be exposed by the beam shaped by the first opening after a stabilization time set as a function of a voltage has elapsed after applying the first voltage, applying a second voltage to the deflector after all the character patterns have been exposed by the beam shaped by the first opening, the second voltage deflects the beam at a next opening, and exposing all the character patterns which can be exposed by the beam shaped by the next opening after the stabilization time has elapsed after applying the second voltage.
REFERENCES:
patent: 5334282 (1994-08-01), Nakayama et al.
patent: 5384466 (1995-01-01), Nakamura et al.
patent: 5404018 (1995-04-01), Yasuda et al.
patent: 6088519 (2000-07-01), Koford
patent: 6137113 (2000-10-01), Muraki
patent: 6495841 (2002-12-01), Ando et al.
patent: 2001/0025931 (2001-10-01), Takamatsu et al.
patent: 2003/0028407 (2003-02-01), Ibaraki et al.
patent: 2003/0094584 (2003-05-01), Yui et al.
patent: 07-134393 (1995-05-01), None
patent: 2000-235946 (2000-08-01), None
patent: P2000-235946 (2000-08-01), None
patent: 2001-257145 (2001-09-01), None
patent: P2001-257145 (2001-09-01), None
Ando Atsushi
Inanami Ryoichi
Magoshi Shunko
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Johnston Phillip A.
Kabushiki Kaisha Toshiba
Wells Nikita
LandOfFree
Charged particle beam exposure method and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charged particle beam exposure method and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charged particle beam exposure method and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3560984