Charged particle beam exposure method and apparatus

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, 250400, H01J 3704

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active

050991337

ABSTRACT:
A charged particle beam exposure method is used for exposing a pattern on an exposing surface using a charged particle beam which has a rectangular cross sectional shape and is deflected to pass through a stencil mask which has a plurality of apertures for forming the rectangular cross sectional shape of the charged particle beam into predetermined stages. The method includes the steps of storing, prior to an exposure process, deflection data indicative of a deflection quantity of the charged particle beam for forming the rectangular cross sectional shape of the charged particle beam into a shape of a desired size. In addition, the method includes detecting, after start of the exposure process, a position of the charged particle beam on the stencil mask relative to the predetermined aperture. The method further includes calculating deflection correction data so that the charged particle is deflected to the reference position on the stencil mask and a deflection quantity of the charged particle beam is calibrated. Finally, the method includes correcting the stored deflection data based on the calculated deflection correction data when making the exposure process using the predetermined aperture of the stencil mask.

REFERENCES:
patent: 4140913 (1979-02-01), Anger et al.
patent: 4145597 (1979-03-01), Yasuda
patent: 4169230 (1979-09-01), Bohler
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4914304 (1990-04-01), Koyama
patent: 5036209 (1991-07-01), Kataoka et al.

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