Charged particle beam exposure method and apparatus

Details Charged particle beam exposure method and apparatus Charged particle beam exposure method and apparatus

1997-03-11

1999-04-06

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, H01J 37304

Patent

active

058922377

ABSTRACT:
In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.

REFERENCES:
patent: 4818885 (1989-04-01), Davis et al.
patent: 5325180 (1994-06-01), Chappelow et al.
patent: 5329130 (1994-07-01), Kai et al.
patent: 5334846 (1994-08-01), Nakano et al.

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