Charged particle beam exposure method and apparatus

Details Charged particle beam exposure method and apparatus Charged particle beam exposure method and apparatus

1992-08-04

1994-07-12

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, H01J 37302

Patent

active

053291301

ABSTRACT:
A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.1 a first correcting operation including correction of pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, where second correcting operation corrects a rotation error component relative to the stage caused by movement of the substrate; obtaining third deflection data D.sub.3 ' which describes a position coordinate of the pattern to be drawn from the present position of the stage by adding corrected first deflection data D.sub.1 ' and corrected second deflection data D.sub.2 '; and controlling a deflector based on third deflection data D.sub.3 '.

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