Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1993-10-20
1995-03-21
Dzierzynski, Paul M.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37302
Patent
active
053998723
ABSTRACT:
A charged-particle beam exposure method is used for a charged-particle beam exposure apparatus equipped with a blanking aperture array plate in which columns are arranged side by side in a first direction, and each of the columns includes a plurality of blanking apertures arranged in a second direction substantially perpendicular to the first direction, a charged-particle beam being moved on a wafer in the first direction. The method includes the steps of (a) determining one of first and second axes of a pattern to be exposed to be a priority axis; (b) projecting an image of the blanking aperture array plate onto the wafer so that the priority axis is perpendicular to the second direction; and (c) deflecting the charged-particle beam so that the wafer is scanned in the direction of the priority axis.
REFERENCES:
patent: 5144142 (1992-09-01), Fueki et al.
Arai Soichiro
Kai Jun-ichi
Nishino Hisayasu
Oae Yoshihisa
Yasuda Hiroshi
Dzierzynski Paul M.
Fujitsu Limited
Nguyen Kiet T.
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