Charged particle-beam exposure device and charged-particle-beam

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504911, 25049222, 430 5, 430296, G03F 900, H01J 3700

Patent

active

061371114

ABSTRACT:
A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

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patent: 5830612 (1998-11-01), Yamada et al.
patent: 5952133 (1999-09-01), Nakasuji
patent: 5981962 (1999-11-01), Groves et al.

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