Charged particle beam exposure compensating proximity effect

Details Charged particle beam exposure compensating proximity effect Charged particle beam exposure compensating proximity effect

1996-04-29

1997-09-16

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 430942, 2504923, G03F 720

Patent

active

056679238

ABSTRACT:
A subject pattern and a lower layer pattern are divided into small regions of a constant dimension using identical mesh of division. Considering of the spreading of charged particle beam due to backward scattering, the small region is set to be, for example, a few .mu.m square. An irradiation energy on each small region is determined by taking backward scattering from lower level pattern into account. Calculation is simplified because a pattern is represented by a pattern areal density. A region with a lower level pattern and a region without a lower level pattern can be exposured by charged particle beam with a comparable accuracy.

REFERENCES:
patent: 4500789 (1985-02-01), Ban
patent: 5278419 (1994-01-01), Takahashi

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