Charged-particle-beam exposure apparatus exhibiting aberration c

Details Charged-particle-beam exposure apparatus exhibiting aberration c Charged-particle-beam exposure apparatus exhibiting aberration c

1998-03-13

1999-11-30

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049222, 250398, H01J 37302, H01J 37153

Patent

active

059947098

ABSTRACT:
Charged-particle-beam (CPB) exposure apparatus are disclosed that project a mask pattern onto a substrate while reducing aberrations. The mask pattern is typically subdivided into mask subfields, separated from each other by struts or the like, that are individually projected onto the substrate in an ordered manner to produce a die pattern in which constituent transfer subfields are properly stitched together. The apparatus comprises a projection-optical system, comprising multiple deflectors, between the mask and the substrate. The deflectors are connected to and controllably actuated by a controller in a manner serving to reduce third-order deflection aberrations to zero. Control of the deflectors is such that the charged-particle beam, propagating from the mask, has a trajectory that is a function of the location of the beam in a mask plane transverse to the optical axis and the location of the beam in a substrate plane transverse to the optical axis.

REFERENCES:
patent: 5283440 (1994-02-01), Sohda et al.
Heritage, "Electron-Projection Microfabrication System," J. Vac. Sci. Technol. 12:1135-1140 (1975).
Hosokawa, "Systematic Elimination of Third Order Aberrations in Electron Beam Scanning System," Optic 56:21-30 (1980).
Koikari et al., "Numerical Calculation of Optical System for EB Projection," MicroProcess '96--The 9th International Microprocess Conference, Jul. 8-11, 1996.
Zhu et al., "Dynamic Correction of Aberrations in Focusing and Deflection Systems with Shaped Beams," SPIE 2522:66-77 (1995).

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