Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML
Reexamination Certificate
active
06903353
ABSTRACT:
A high-precision multi-charged-particle-beam exposure apparatus has a charged particle source (ES) that emits a charged particle beam. An aperture array (AA) having plural apertures divides the charged particle beam from the charged particle source (ES) into plural charged particle beams and a lens array (LA) having plural electron lens forms plural intermediate images of the charged particle source (ES) on substantially one plane with the plural charged particle beams from the aperture array (AA). A blanker array (BA) located on the plane where the plurality of intermediate images are to be formed has plural blankers, and a reduction electron optical system that reduces and projects the images of the charged particle source (ES) onto a substrate.
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Hashimoto Shin'ichi
Muraki Masato
Sohda Yasunari
Advantest Corporation
Hitachi , Ltd.
Nguyen Kiet T.
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