Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-02-03
1995-03-28
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504921, 250424, H05H 100
Patent
active
054019745
ABSTRACT:
In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.
REFERENCES:
patent: 4665315 (1987-05-01), Bucchetti et al.
patent: 5312519 (1994-05-01), Sakai et al.
Arai Soichiro
Nakamura Moritaka
Oae Yoshihisa
Sakamoto Kiichi
Satoh Takamasa
Berman Jack I.
Beyer James
Fujitsu Limited
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