Charged-particle-beam exposure apparatus and method of...

Details Charged-particle-beam exposure apparatus and method of... Charged-particle-beam exposure apparatus and method of...

2005-11-29

2005-11-29

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

06969862

ABSTRACT:
In a charged-particle-beam exposure apparatus for exposing a wafer using a charged-particle beam, an electron beam emitted from an electron source serving as a source of charged particles is substantially collimated by a collimator lens and irradiates an aperture array (3), which has apertures for forming a plurality of electron beams used to expose a wafer. A current detector array has current detectors for measuring the intensities (currents) of electron beams at portions of the-aperture array other than where the apertures are present. During the wafer exposure operation, each current detector of the current detector array measures the intensity of the electron beam. The electron-beam intensity distribution is evaluated based upon the results of measurement and, when necessary, the optical power of electrostatic lenses that construct the collimator lens (2) is adjusted to uniformalize the electron-beam intensity distribution.

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