Charged particle beam exposure apparatus

Details Charged particle beam exposure apparatus Charged particle beam exposure apparatus

1985-11-25

1987-03-03

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3730

Patent

active

046477829

ABSTRACT:
The dimensions of the cross section of an electron beam emitted from a beam source are changed by deflectors interposed between a pair of aperture masks and are position-corrected by beam position correction deflectors. The electron beam is then irradiated onto a wafer. In accordance with beam dimension signals from a CPU, a correction signal generating circuit supplies correction signals to a beam position correction circuit. The circuit supplies beam position correction signals to the deflectors.

REFERENCES:
patent: 4151422 (1979-04-01), Goto et al.
patent: 4258265 (1981-03-01), Sumi
patent: 4393310 (1983-07-01), Hahn
Solid State Technology, vol. 25, No. 6, Jun. 1982, pp. 74-82, Port Washington, N.Y., US; B. P. Piwczyk, et al.: "Electron Beam Lithography for the 80s"* Figures 6,7, p. 77, right-hand raster/vector scan systems".

Affiliated with

Also associated with

Rating

Charged particle beam exposure apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charged particle beam exposure apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charged particle beam exposure apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1018442