Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-09-30
2000-07-11
Berman, Jack
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01J 3730, H01J 3706
Patent
active
060876670
ABSTRACT:
Charged-particle-beam (CPB) lithography apparatus are disclosed that provide high accuracy in forming, by projection exposure using a charged particle beam, a pattern on a sensitive substrate at high throughput. The apparatus comprise a cathode having a work function of 2.65 eV or less within a space-charge limitation region. The temperature of the cathode is controlled within a range of 1,200 to 1,400.degree. C.
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Essig et al., "Critical Koehler Illumination for Shaped Beam Lithography," J. Vac. Sci. Technol. 4:83-85 (1986).
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Takagawa et al., "Emission Characteristics of Single-Crystal LaB.sub.6 Electron Gun," J. Appl. Phys. 53:5891-5897 (1982).
Yamauchi et al., "Work function of LaB6", Applied Physics Letters, vol. 29, No. 10, pp. 638-640, Nov. 1976.
Kawata Shintaro
Nakasuji Mamoru
Berman Jack
Nikon Corporation
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