Charged-particle-beam (CPB) lithography apparatus, evaluation me

Details Charged-particle-beam (CPB) lithography apparatus, evaluation me Charged-particle-beam (CPB) lithography apparatus, evaluation me

1997-09-30

2000-07-11

Berman, Jack

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3730, H01J 3706

Patent

active

060876670

ABSTRACT:
Charged-particle-beam (CPB) lithography apparatus are disclosed that provide high accuracy in forming, by projection exposure using a charged particle beam, a pattern on a sensitive substrate at high throughput. The apparatus comprise a cathode having a work function of 2.65 eV or less within a space-charge limitation region. The temperature of the cathode is controlled within a range of 1,200 to 1,400.degree. C.

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patent: 5633507 (1997-05-01), Pfeiffer et al.
Essig et al., "Critical Koehler Illumination for Shaped Beam Lithography," J. Vac. Sci. Technol. 4:83-85 (1986).
Telecommunication Technology Handbook, p. 471, published by Maruzenn (1957) (in the Japanese language, with partial English translation attached).
Takagawa et al., "Emission Characteristics of Single-Crystal LaB.sub.6 Electron Gun," J. Appl. Phys. 53:5891-5897 (1982).
Yamauchi et al., "Work function of LaB6", Applied Physics Letters, vol. 29, No. 10, pp. 638-640, Nov. 1976.

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