Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1987-08-12
1989-05-30
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396R, H01J 2700
Patent
active
048353990
ABSTRACT:
Positive and negative particles are emitted from the same emission portion of a charged particle source. In a charged particle optical system, the ions or electrons having a particularly energy among the emitted charged particles are selectively passed and their blanking is performed. The magnetic field strength and electric strength in the charged particle optical system are preferably controlled by an E.times.B type mass separator or quadrupole mass separator provided in the charged particle optical system.
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"Maskless Ion Implantation Tech.: Be and Si Implantation in GaAs", Hashimoto et. al., Japanese Journal Oyo Butsuri (Applied Physics), vol. 53, No. 8 (1984) pp. 704-708 (not translated).
Hosaka Sumio
Tamura Hifumi
Anderson Bruce C.
Hitachi , Ltd.
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