Charged device mode ESD protection circuit

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

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361111, H02H 900

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059010223

ABSTRACT:
An ESD protection circuit for deep-submicron CMOS IC's provides Charged-Device Model (CDM) protection in addition to Human-Body Model (HBM) and Machine Model (MM) ESD events. An on-chip inductor is connected in series between a conventional ESD protection circuit and the thin gate oxide of a charged-device IC input stage. The inductor provides a voltage drop effect, a current limitation effect, and a time delay effect to prevent the CDM ESD current from being discharged through the thin gate oxide of the input stage IC. The inductor cooperates with traditional input ESD protection circuits to enable full ESD protection against all HBM, MM, and CDM ESD events. The inductor can be implemented in a square spiral layout structure of metal and/or poly, and can be placed directly under the input bonding pad, so as not to increase the total layout area of the input pad and input ESD protection circuits.

REFERENCES:
patent: 5446311 (1995-08-01), Ewen et al.
Standard for ESD Sensitivity Testing--Human Body Model (HBM) Component Level, EOS/ESD-S5.1, EOS/ESD Association, 1993. No Month.
Draft Standard for ESD Sensitivity Testing--Machine Model (MM) Component Level, EOS/ESD-DS5.2, EOS/ESD Association, 1992. No Month.
Draft Standard for Charged Device Model (CDM) ESD Sensitivity Testing (socketed CDM and non-socketed CDM), EOS/ESD-DS5.3.1, EOS/ESD Association, 1993. No Month.
K. Verhaege et al., "Influence of tester, test method and device type on CDM ESD testing," Proc. of EOS/ESD Symp., 1994, pp. 49-62. No Month.
M. Tanaka et al., "Clarification of ultra-high-speed electrostatic discharge and unification of discharge model," Proc. of EOS/ESD Symp., 1994, pp. 171-181. No Month.
R. Renninger et al., "A field-induced charged-device model simulator," Proc. of EOS/ESD Symp., 1989, pp. 59-71. No Month.
A. Olney, "A combined socketed and non-socketed CDM test approach for eliminating real-world CDM failures," Proc. of EOS/ESD Symp., 1996, vol. 18, pp. 62-75. No Month.
C. Chen, J. Chou, W. Lur, and S. Sun, "A novel 0.25 .mu.m shallow trench isolation technology," IEEE IEDM, 1996, pp. 837-840. No month.
T. Maloney, "Designing MOS inputs and outputs to avoid oxide failure in the charged device model," Proc. of EOS/ESD Symp., 1988, pp. 220-227. No Month.
Y. Fukuda, K. Kato, and E. Umemura, "ESD and latch up phenomena on advanced technology LSI," Proc. of EOS/ESD Symp., 1996, pp. 76-84. No Month.
G. Meneghesso, J. Luchies, F. Kuper, and A. Mouthaan, "Turn-on speed of grounded gate NMOS ESD protection transistors," Proc. of European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, (Journal of Microelectronics and Reliability, vol. 36, No. 11/12, pp. 1735-1738, 1996. No Month.
C. Russ, K. Verhaege, K. Bock, G. Groeseneken, and H. Mass, "Simulation study for the CDM ESD behavior of the grounded-gate NMOS," Proc. of European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, (Journal of Microelectronics and Reliability, vol. 36, No. 11/12, pp. 1739-1742, 1996. No Month.
C. Russ, K. Verhaege, K. Bock, P. Roussel, G. Groeseneken, and H. Maes," A compact model for the grounded-gate NMOS behavior under CDM ESD stress," Proc. of EOS/ESD Symp., 1996, pp. 302-315. No Month.
N. Nguyen and R. Meyer, "Si IC-compatible inductors and LC passive filters," IEEE Journal of Solid-State Circuits, vol. 25, pp. 1028-1031, 1990. No Month.
B.-K. Kim et al., Monolithic planar RF inductor and waveguide structures on silicon with performance comparable to those in GaAs MMIC, IEEE IEDM, 1995, pp. 717-720. No Month.
J. Burghartz, M. Soyuer, and K. Jenkins, "Microwave inductors and capacitors in standard multilevel interconnect silicon technology," IEEE Trans. Microwave Theory and Technology, vol. 44, No. 1, pp. 100-104, 1996. No Month.
M. Soyuer et al., "Multilevel monolithic inductors in silicon technology," Electronics Letters, vol. 31, No. 5, pp. 359-360, 1995. No Month.
J. Burghartz et al., "Monolithic spiral inductors fabricated using a VLSI Cudamascene interconnect technology and low-loss substrates," IEEE EEDM, 1996, pp. 99-102. No Month.
C.-Y. Wu and S.-Y. Hsiao, "Analysis and modeling of square spiral inductors on silicon substrate," Proc. of International Conference on Electronics, Circuits, and Systems, 1995, pp. 528-531. No Month.

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