Charged beam writing method and writing tool

Details Charged beam writing method and writing tool Charged beam writing method and writing tool

2006-10-17

2006-10-17

Vanore, David A. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S397000

Reexamination Certificate

active

07122809

ABSTRACT:
A charged beam writing method includes acquiring reference data of shapes or positions of a plurality of apertures of a second shaping aperture, thereafter performing a writing operation, scanning a beam passed through a first shaping aperture over the second shaping aperture while a blanking deflector is driven to intercept irradiation of the shaped beam to the surface of a substrate to be processed by the blanking aperture after performing the writing operation for a certain time, measuring the shapes or the positions of apertures of the second shaping aperture by a detector, comparing the shapes or the positions with the reference data to thereby measure shift amounts of the shapes or the positions of apertures of the second shaping aperture, correcting a deflection amount of the objective deflector in accordance with the shift amount, and resuming the writing operation after stopping the driving of the blanking deflector.

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Nakayama, Y. et al., “Thermal Characteristics of Si Mask for EB Cell Projection Lithography”, Jpn. J. Appl. Phys., vol. 31, Part 1, No. 12B, pp. 4268-4272, (Dec. 1992).

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