Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1989-08-14
1990-04-03
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
21912125, H01J 37302
Patent
active
049143042
ABSTRACT:
In an electron beam exposure system, an electron beam emitted from an electron gun is shaped by first and second beam-shaping aperture masks and is projected on a target to draw a predetermined pattern. The predetermined pattern consists of rectangular segment patterns, right-angled triangular segment patterns and predetermined identical segment patterns. Thus, the first aperture mask has a main rectangular aperture and additional predetermined apertures and the second aperture mask has a combination of rectangular and hexagonal apertures which contact each other at one side. The rectangular segment pattern is exposed by the beam passing through the main aperture of the first aperture mask and the rectangular aperture of second aperture and the triangular segment pattern is exposed by the beam passing through the main aperture of the first aperture mask and the triangular aperture of the second aperture mask. The predetermined segment pattern is exposed by the beam passing through the additional aperture of the first aperture mask and the triangular aperture of the second aperture mask.
REFERENCES:
Thomson et al., J. Vac. Sci. Technol., 15(3), May/Jun. 1978, pp. 891-895.
"Recent Advances in Electron-Beam Lithography for the High-Volume Production of VLSI Devices", IEEE Trans. on Ed., vols. Ed-26, No. 4, Apr. 1979; Hans C. Pfeiffer.
Berman Jack I.
Kabushiki Kaisha Toshiba
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