Charged-beam exposure mask and charged-beam exposure method

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430296, G03F 900

Patent

active

059686863

ABSTRACT:
An electron-beam exposure mask that is able to realize the required pattern transfer accuracy independent of the deflection distortion and aberration of an electron beam. This mask includes a substrate with a first area and a second area, a first plurality of cell apertures formed in the first area of the substrate, and a second plurality of cell apertures formed in the second area of the substrate. The first area of the substrate is designed so that a charged-beam irradiated to the first area has a deflection angle less than a reference angle. The second area of the substrate is designed so that a charged-beam irradiated to the second area has a deflection angle equal to or greater than the reference angle. Each of the first plurality of cell apertures corresponds to fine patterns necessitating high pattern transfer accuracy. Each of the second plurality of cell apertures corresponds to rough patterns unnecessitating the high pattern transfer accuracy.

REFERENCES:
patent: 5334282 (1994-08-01), Nakayama et al.
patent: 5674413 (1997-10-01), Pfeiffer et al.

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