Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-06-02
2009-06-16
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S398000, C250S492200, C250S42300F, C250S397000, C250S400000, C250S492300, C250S251000, C250S492220, C250S3960ML, C427S523000, C204S298040, C200S252000
Reexamination Certificate
active
07547899
ABSTRACT:
A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.
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U.S. Appl. No. 11/445,667, filed Jun. 2, 2006, Berrian et al.
U.S. Appl. No. 11/445,722, filed Jun. 2, 2006, Vanderpot et al.
International Search Report for International Patent Application PCT/US06/021647; Mailing Date of Mar. 9, 2007, p. 1-6.
Huang Yongzhang
Vanderpot John W.
Axcelis Technologies Inc.
Berman Jack I
Eschweiler & Associates LLC
Sahu Meenakshi S
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