Charged beam dump and particle attractor

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S3960ML, C250S398000, C250S492200, C250S42300F, C250S397000, C250S400000, C250S492300, C250S251000, C250S492220, C250S3960ML, C427S523000, C204S298040, C200S252000

Reexamination Certificate

active

07547899

ABSTRACT:
A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

REFERENCES:
patent: 5134299 (1992-07-01), Denholm
patent: 6501078 (2002-12-01), Ryding et al.
patent: 6661016 (2003-12-01), Berrian
patent: 2002/0053642 (2002-05-01), Berrian
patent: 2006/0284116 (2006-12-01), Berrian et al.
patent: 1030344 (2000-08-01), None
patent: 2345574 (2000-07-01), None
U.S. Appl. No. 11/445,667, filed Jun. 2, 2006, Berrian et al.
U.S. Appl. No. 11/445,722, filed Jun. 2, 2006, Vanderpot et al.
International Search Report for International Patent Application PCT/US06/021647; Mailing Date of Mar. 9, 2007, p. 1-6.

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