Charge trapping memory cell, method for fabricating it, and...

Static information storage and retrieval – Floating gate

Reexamination Certificate

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C365S185260, C365S185270

Reexamination Certificate

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06891751

ABSTRACT:
For particularly flexible and space-saving information storage, a charge trapping memory cell and a corresponding semiconductor memory device include a charge trapping gate configuration provided with a plurality of charge trapping gates each configured for substantially independent information storage. As a result, a plurality of information units can be stored independently of one another in the memory cell. Also provided is a method for producing such a memory cell.

REFERENCES:
patent: 5999453 (1999-12-01), Kawata
patent: 20010021126 (2001-09-01), Lavi et al.
patent: 20040004859 (2004-01-01), Forbes et al.

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