Charge trapping memory and accessing method thereof

Details Charge trapping memory and accessing method thereof Charge trapping memory and accessing method thereof

2007-05-25

2009-10-06

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185210, C365S189090, C365S210100, C365S210110, C365S210120

Reexamination Certificate

active

07599220

ABSTRACT:
An accessing method for a charge trapping memory including memory cells and tracking cells for storing expected data. The method includes the following steps. In a specific time first, the expected data is written into the tracking cells and the memory cells are not being programmed, read or erased. Next, the data stored in the tracking cells is sensed as read data according to a present reference current. Then, the present reference current is adjusted to an adjusted reference current according to a difference between the read data and the expected data so that the data stored in tracking cells is sensed as corresponding with the expected data according to the adjusted reference current. Thereafter, the memory cells are read according to the adjusted reference current.

REFERENCES:
patent: 7123514 (2006-10-01), Watanabe
patent: 7440330 (2008-10-01), Noichi
patent: 7495955 (2009-02-01), Ido

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