Charge trap type non-volatile memory device and program...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185220, C365S189090, C365S199000

Reexamination Certificate

active

07616496

ABSTRACT:
A method of programming a charge trap type non-volatile memory device includes applying a program pulse to a selected memory cell, applying a detrap pulse to the selected memory cell, and applying a program verify pulse to the memory cell. The charge trap type non-volatile memory device includes a memory cell array including a charge trap memory cell, and a high voltage generator for supplying a detrap pulse to the charge trap memory cell.

REFERENCES:
patent: 6721204 (2004-04-01), Yeh et al.
patent: 2005/0237816 (2005-10-01), Lue et al.
patent: 2007/0036001 (2007-02-01), Kanda et al.
patent: 2007/0183208 (2007-08-01), Tanaka et al.
patent: 1020050112651 (2005-12-01), None
patent: 1020050116975 (2005-12-01), None

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