Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-06-29
2009-11-10
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S189090, C365S199000
Reexamination Certificate
active
07616496
ABSTRACT:
A method of programming a charge trap type non-volatile memory device includes applying a program pulse to a selected memory cell, applying a detrap pulse to the selected memory cell, and applying a program verify pulse to the memory cell. The charge trap type non-volatile memory device includes a memory cell array including a charge trap memory cell, and a high voltage generator for supplying a detrap pulse to the charge trap memory cell.
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patent: 1020050112651 (2005-12-01), None
patent: 1020050116975 (2005-12-01), None
Choi Eun Seok
Kim Se Jun
Park Kyoung Hwan
Yoo Hyun Seung
Hynix / Semiconductor Inc.
Le Thong Q
Townsend and Townsend / and Crew LLP
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