Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-10-11
2005-10-11
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C430S059500, C430S070000, C430S071000, C430S072000, C430S073000, C430S076000, C430S077000
Reexamination Certificate
active
06953957
ABSTRACT:
The invention generally relates to the use of poly-3,3″-dialkyl-2,2′:5′,2″-terthiophenes as charge transport materials or semiconductors in electrooptical, electronic or electroluminescent devices, and to charge transport and semiconducting components and devices comprising poly-3,3″-dialkyl-2,2′:5′,2″-terthiophenes.
REFERENCES:
patent: 4861692 (1989-08-01), Kuroda et al.
Giles Mark
Heeney Martin
McCulloch Iain
Rost Henning
Thompson Marcus
Merck Patent GmbH
Millen White Zelano & Branigan P.C.
Nelms David
Siemens AG
Tran Mai-Huong
LandOfFree
Charge transport material including a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charge transport material including a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge transport material including a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3454776