Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-02-24
1995-05-16
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257 67, 257236, 257240, H01L 2978, H01L 2701, H01L 2713
Patent
active
054163463
ABSTRACT:
A charge transfer device includes: a transfer channel for transferring a charge in a charge transfer direction; a charge detecting section having a diffusion layer for storing the charge transferred through the transfer channel and for inducing a voltage corresponding to the amount of the stored charge; and a transistor for detecting the induced voltage, the transistor having: a gate electrode formed on the diffusion layer, the gate electrode being in direct contact with the diffusion layer; a gate insulating film formed on the gate electrode; and a channel region formed above the gate electrode.
REFERENCES:
patent: 4672645 (1987-06-01), Bluzer et al.
patent: 4984045 (1991-01-01), Matsunaga
patent: 5192990 (1993-03-01), Stevens
M. Yoshihisa, Patent Abstracts of Japan, vol. 5, No. 78 (1981).
Hashiguchi Kazuo
Nagakawa Tadashi
Conlin David G.
Corless Peter F.
Ngo Ngan V.
Sharp Kabushiki Kaisha
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