Charge transfer, tetrode bucket-brigade device

Details Charge transfer, tetrode bucket-brigade device Charge transfer, tetrode bucket-brigade device

1979-11-30

1981-02-10

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 59, H01L 2978, H01L 2904, G11C 1928

Patent

active

042505178

ABSTRACT:
An improved BBD structure is disclosed which is realized with MOS, two layer, polysilicon technology. In the tetrode structure, the transfer gate overlaps the tetrode gate with no intermediate substrate region. The storage capacitor is off-set from the propagation channel and is formed by the two layers of polysilicon without using a p-n junction. High transfer efficiency is obtained over a wide frequency range with a shorter length per stage.

REFERENCES:
patent: 3735156 (1973-05-01), Krambeck et al.
patent: 3745383 (1973-07-01), Sangster
patent: 4157558 (1979-06-01), Weckler
Sequin et al., Charge Transfer Devices, Academic Press, N.Y. (1975), pp. 38-39.

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