Charge transfer semiconductor device with electrodes separated b

Details Charge transfer semiconductor device with electrodes separated b Charge transfer semiconductor device with electrodes separated b

1976-09-10

1977-11-01

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

357 24, B01J 1700, H01L 2958

Patent

active

040558851

ABSTRACT:
A charge transfer semiconductor device is made of a semiconductor body on one surface of which is formed an insulating layer of SiO.sub.2. A plurality of first series of electrodes of Al are disposed on the SiO.sub.2 layer and oxide regions (Al.sub.2 O.sub.3) of the first series of electrodes are disposed on side surfaces of the first series of electrodes, which are formed by oxidizing the side surfaces of the first series of electrodes. A plurality of second series of electrodes is provided, each of which is disposed between a pair of the first series of electrodes so as to be separated from the first series of electrodes by the oxide region. Finally, means are connected to the electrodes for forming spatially defined depletion regions in the surface of the semiconductor body beneath the electrodes and for transferring charges between the depletion regions.

REFERENCES:
patent: 3438121 (1969-04-01), Warlass et al.

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