Charge transfer semiconductor device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 24, G11C 1928, H01L 2978

Patent

active

041773918

ABSTRACT:
A charge transfer semiconductor device has the input signals of charge carriers divided successively; the successively divided input signals are transferred by more than two charge transfer semiconductor elements successively, and transferred input signals are successively combined and detected, whereby a high speed transferring operation of the input signals is accomplished.

REFERENCES:
patent: 3656011 (1972-04-01), Weinberg
patent: 3763480 (1973-10-01), Weimer
patent: 3787852 (1974-01-01), Puckette et al.
patent: 3889245 (1975-06-01), Gosney
Tompsett, "Charge Transfer Devices", J. Vac. Sci. Technol., vol. 9 (7/72), pp. 1166-1181.
Melen et al., "One-Phase CCD: A New Approach to Charge Coupled Device Clocking", IEEE J. Solid-State Circuits, vol. SC-7 (2/72), pp.92-93.
Barna et al., Integrated Circuits in Digital Electronics, Wiley, N.Y., 1973, pp. 378-379.

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