Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-02-06
1998-04-21
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, 257225, 257229, 257233, 257249, 257250, 257443, H01L 27148
Patent
active
057420815
ABSTRACT:
A charge transfer image pickup device is disclosed. One embodiment of the device includes a plurality of photoelectric conversion elements for producing signal charges in response to light applied thereto. A vertical charge transfer part including a first region having a first well layer and for transferring the signal charges produced by the photoelectric conversion elements is provided. A horizontal charge transfer part including a second region having a second well layer and coupled to the vertical charge transfer part to receive transferred signal charges by using a terminal vertical transfer electrode of the vertical charge transfer part is also included. The first and second well layers partially overlap to form an overlap section that does not extend over the terminal vertical transfer electrode in the direction from the second region to the first region. A barrier layer is selectively formed in the first region such that the potential profile of the device descends gradually in the direction from the first region to the second region.
REFERENCES:
patent: 5323034 (1994-06-01), Furumiya
NEC Corporation
Tran Minh-Loan
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