Charge transfer image pick-up device

Details Charge transfer image pick-up device Charge transfer image pick-up device

1993-04-15

1994-06-21

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257220, 257221, 257223, 257229, 257233, 257241, H01L 2978, H01L 2714, H01L 3100

Patent

active

053230345

ABSTRACT:
In a charge transfer image pick-up device including vertical registers and a horizontal register, impurity density of a well layer of the vertical registers is higher than that of a well layer of the horizontal register and a buried layer formed in the well layer of the vertical registers is composed of a first buried layer which is connected to a buried layer of the well layer of the horizontal register and a second buried layer formed on the first buried layer and having impurity density higher than that of the first buried layer, so that degradation of transfer efficiency of signal charge can be avoided and the manufacturing process can be simplified.

REFERENCES:
patent: 5063581 (1991-11-01), Akimoto et al.
Toshifumi Ozaki et al., "A Proposal of a Highly Sensitive Interline CCD for HDTV", Extended Abstracts of the 1991 International Conf. on Solid State Devices and Materials, Yokohama, 1991, pp. 666-668.

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