Charge transfer device with two-phase two-layered electrode stru

Details Charge transfer device with two-phase two-layered electrode stru Charge transfer device with two-phase two-layered electrode stru

1994-04-29

1996-05-28

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257221, 257231, 257250, H01L 29768, H01L 27148

Patent

active

055214053

ABSTRACT:
A charge transfer device is arranged such that a plurality of first kind charge transfer electrodes and a plurality of second kind charge transfer electrodes are alternately provided on an insulating film, and every other ones of the second kind charge transfer electrodes are grouped into a first and a second group. Potential barriers are provided at upstream portions of the charge transfer region beneath the respective second kind charge transfer electrodes. A first metal interconnect interconnects commonly the first kind charge transfer electrodes, a second metal interconnect interconnects commonly the first group second kind charge transfer electrodes, and a third metal interconnect interconnects commonly the second group second kind charge transfer electrodes. The first kind charge transfer electrodes receive a constant potential, and the first group second charge transfer electrodes and the second group second kind charge transfer electrodes respectively receive clock pulses having phases opposite to each other. The first and second kind charge transfer electrodes do not need to be overlapped with each other at contact portions so that the aspect ratio can be reduced and the occurrence of defects in metal interconnects can be prevented.

REFERENCES:
patent: 3745383 (1973-07-01), Sangster
patent: 4157558 (1979-06-01), Weckler
patent: 4250517 (1981-02-01), Tseng
patent: 4709380 (1987-11-01), Itoh
patent: 4814844 (1989-03-01), Bluzer
patent: 4995061 (1991-02-01), Hynecek
patent: 5315137 (1994-05-01), Asaumi et al.
patent: 5402459 (1995-03-01), Hynecek

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