Charge transfer device with multi-line read structure

Details Charge transfer device with multi-line read structure Charge transfer device with multi-line read structure

1995-05-24

1996-07-02

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257234, 257240, 257241, 257249, 257250, H01L 27148, H01L 29768

Patent

active

055325033

ABSTRACT:
A charge transfer device of two-line read structure is formed with a first charge transfer path for transferring first-group charges, a second charge transfer path for transferring second-group charges, and a transfer gate portion (106). To complete the transfer operation of all the second-group charges outputted at a time, the transfer operation of the charges from the first transfer path to the second charge transfer path by the transfer gate portion is divided into a plurality of times. In addition, the second-group charges outputted at time are transferred for each divided set of pixels in each divided transfer operation.

REFERENCES:
patent: 4493060 (1985-01-01), Varshney
patent: 4750042 (1988-06-01), Murayama et al.
patent: 4807037 (1989-02-01), Iesaka et al.
patent: 4949183 (1990-08-01), Stevens
patent: 5189498 (1993-02-01), Sakakibara
Patent Abstracts of Japan, vol. 15, No. 412 (E-1124) Oct. 21, 1991.

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