Charge transfer device with J FET isolation and means to drain s

Details Charge transfer device with J FET isolation and means to drain s Charge transfer device with J FET isolation and means to drain s

1974-11-22

1976-06-22

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 15, 357 22, 357 48, 357 50, H01L 2704, H01L 2964, H01L 2980

Patent

active

039654818

ABSTRACT:
A semiconductor device comprising a surface layer of one conductivity type provided on a support and separated therefrom by a junction, said surface layer defining a surface and comprising island-insulating means in the form of an electrode pattern at the surface and which surrounds at least an island-shaped part of the surface layer comprising a component. The electrode pattern is separated from the surface layer by a barrier junction and is to induce electric fields in the surface layer to form a depletion region that is below the electrode pattern and extends throughout the thickness of the surface layer, an electric connection for draining leakage currents, is at part of the surface layer present at the edge of the surface and outside the pattern.

REFERENCES:
patent: 3035186 (1962-05-01), Doucette
patent: 3653988 (1972-04-01), Glinski et al.
patent: 3739240 (1973-06-01), Krambeck
patent: 3790825 (1974-02-01), Barron et al.
patent: 3792322 (1974-02-01), Boyle et al.
DeFalco, "...Denser Bipolar Devices," Electronics, July 19, 1971, p. 78.

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