Charge transfer device with high speed transfer rate

Details Charge transfer device with high speed transfer rate Charge transfer device with high speed transfer rate

1992-03-20

1994-11-29

Mancuso, Joseph

Television

Camera, system and detail

Solid-state image sensor

348321, 257246, H04N 314, H04N 5225

Patent

active

053694341

ABSTRACT:
The present invention is directed to a charge transfer device having a four-phase drive system register in which first, second, third and fourth transfer sections sequentially arrayed constitute one bit. The first, second, third and fourth transfer sections are arranged such that, when applied with drive pulses of the same level, a potential difference occurs between the first and third transfer sections and the second and fourth transfer sections. Also, charges are transferred by four-phase drive pulses such that the first and second transfer sections go to high level and the third and fourth transfer sections go to low level during the first transfer interval, the first, second and fourth transfer sections go to low level and the third transfer section goes to high level during the second transfer interval, the first and second transfer sections go to low level and the third and fourth transfer sections go to high level during the third transfer interval, and the first transfer section goes to high level and the second, third and fourth transfer sections go to low level during the fourth transfer interval. According to the present invention, a data rate can be increased by reducing the charge transfer time in the four-phase drive system register in the CCD solid state image sensing device.

REFERENCES:
patent: 4001878 (1977-01-01), Weimer
patent: 4513313 (1985-03-01), Kinoshita et al.
patent: 4574313 (1986-03-01), Battson
patent: 4831453 (1989-05-01), Takemura
patent: 4849814 (1989-07-01), Van De Steeg
patent: 4910569 (1990-03-01), Erhardt
patent: 4985758 (1991-01-01), Hashimoto

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