Charge transfer device with electrode structure of high transfer

Details Charge transfer device with electrode structure of high transfer Charge transfer device with electrode structure of high transfer

1991-01-28

1992-06-30

Hille, Rolf

357 54, 357 2315, H01L 2978, H01L 2934

Patent

active

051268116

ABSTRACT:
A charge transfer device includes a plurality of spaced apart charge transfer electrodes disposed on a semiconductor substrate with an insulating film intervening between the electrodes and between the substrate and the electrodes. The insulating film between the charge transfer electrodes has a higher dielectric constant than other parts of the insulating layer electrode. The insulating film may also have a higher dielectric constant in the region between part of the charge transfer electrodes and the substrate. Therefore, the flattening of a transfer electrode is achieved in a one-layer electrode structure. In addition, a potential "hollow" produced between adjacent charge transfer electrodes is reduced and the loss of transferred charges is reduced.

REFERENCES:
Nelson S. Saks; "Fabrication of surface-channel charge-coupled devices with ultralow density of interface states"; Oct. 15, 1982; Applied Physics Lett.; pp. 737-739.

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