Charge transfer device wherein the time constant between the clo

Details Charge transfer device wherein the time constant between the clo Charge transfer device wherein the time constant between the clo

1994-08-17

1995-05-09

Razavi, Michael T.

Television

Camera, system and detail

Solid-state image sensor

348316, 348320, 257245, 257340, H04N 5335

Patent

active

054144671

ABSTRACT:
The present invention is directed to a charge transfer device formed on a semiconductor substrate which comprises a channel region formed on the semiconductor substrate, at least a set of transfer gate electrodes formed adjacent to each other and insulated from each other, the set of transfer gate electrode formed over the channel region through an insulating film, clock means for providing the transfer gate electrode with multiple clock pulses, and a plurality of resistors provided between each of the transfer gate electrodes and the clock means, the resistors having respective values corresponding to capacitances of the transfer gate electrodes. Therefore, a transfer efficiency of signal charges can be improved without reducing a maximum amount of signal charges handled by a vertical register.

REFERENCES:
patent: 4279000 (1981-07-01), Fukuda et al.
patent: 4590506 (1986-05-01), Esser
patent: 4617471 (1986-10-01), Suzuki et al.
patent: 4935793 (1990-06-01), Boutigny
patent: 5019884 (1991-05-01), Yamawaki

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