Charge transfer device type solid state image sensor having cons

Details Charge transfer device type solid state image sensor having cons Charge transfer device type solid state image sensor having cons

1989-06-30

1992-02-25

Miller, Stanley D.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Compensating for or preventing signal charge deterioration

377 60, 377 62, 357 24, 35821319, H01L 2978, G11C 1928, H04N 314

Patent

active

050919229

ABSTRACT:
A horizontal transfer shift register is formed on a semiconductor substrate for use in a solid state image sensor of the charge transfer device type. The horizontal transfer shift register is coupled to receive electric charge signals in parallel and operates to serially transfer the received electric charge signals to an signal output circuit. The horizontal transfer shift register comprises a plurality of horizontal transfer electrodes formed on the substrate, a control electrode formed on the substrate adjacent to a horizontal transfer electrode adjacent to the signal output circuit, and a drain diffusion region formed in the substrate adjacent to the control electrode. When a predetermined potential is applied to the control electrode, a portion of electric charge which should be accumulated under the horizontal transfer electrode adjacent to the signal output circuit is discharged to the drain diffusion region, so that the electric charge signal will not exceed a saturation level determined by the predetermined potential applied to the control electrode.

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