Charge transfer device signal processing

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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250211J, 307304, 357 24, H01L 2710, G08C 1508, H01L 3100

Patent

active

039448495

ABSTRACT:
An input scheme suitable for low-level input signals, e.g., from an IR detector array, wherein the input signals are transferred over respective channels to parallel inputs of a charge transfer device shift register, under control of IGFET switching transistor circuits in each channel. Corresponding IGFETS in the channels are operated by common gate voltages. Introduction of noise due to variation of the gate threshold voltages between IGFETS in the transfer circuits is obviated by using the same IGFET in each channel to reset the potential at the input node of that channel as well as to transfer the input signals over that channel to the shift register.

REFERENCES:
patent: 3808435 (1974-04-01), Bate et al.
Solid-State Device Research Conf. Abstracts, IEEE Trans. on Electron Devices, Dec. 1973, p. 1172, abstract 3.
Carnes et al., "Measurements of Noise . . . ", RCA Review, Vol. 34, Dec. 1973, p. 561.

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