Charge transfer device provided with improved output structure

Details Charge transfer device provided with improved output structure Charge transfer device provided with improved output structure

1992-12-10

1994-04-26

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257236, 257249, 377 60, 377 62, H01L 2978

Patent

active

053069323

ABSTRACT:
A charge transfer device in which a charge transfer section, an output gate, a floating diffused region, a reset gate electrode, a reset drain region, a barrier gate electrode and an absorption drain region are provided in semiconductor substrate. The reset drain region for resetting or draining charges in the floating diffused region is connected via a capacitor to a constant potential terminal. The absorption drain region is provided with a voltage booster for raising the amplitude of the transfer pulse to a level higher than the power source voltage. The output voltage of the voltage booster is supplied to the absorption drain region. The channel potential beneath the barrier gate electrode is set lower than that beneath the reset gate electrode.

REFERENCES:
patent: 4939560 (1990-07-01), Naraba et al.

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